In this paper, we report the seed/catalyst-free vertical growth of ZnO nanostructures on graphene by a single-step cathodic electrochemical deposition method. The term ‘seed/catalyst-free’ refers to the omission of predeposition of ZnO seed layer and selleck products any kind of Selleckchem Linsitinib catalyst by other processes. A highly dense vertically aligned ZnO nanostructure on a single-layer (SL) graphene

was successfully grown. Methods Figure 1a shows the schematic of chemical vapor deposition (CVD)-grown SL graphene on silicon dioxide (SiO2)/Si substrate (Graphene Laboratories Inc., Calverton, NY, USA). The growth of the ZnO nanostructures on graphene/SiO2/Si was carried out by a cathodic electrochemical deposition in 50 mM of zinc nitrate hexahydrate (Zn(NO3)2 · 6H2O, ≥99.0% purity; Sigma-Aldrich, St. Louis, MO, USA) and hexamethylenetetramine (HMTA, C6H12N4, ≥99.0% purity, Sigma-Aldrich). As shown in Figure 1b, platinum (Pt) wire acted as an anode (counter electrode), while the graphene acted as a cathode. Both anode and cathode were connected to the external direct current (DC) power supply. Different current densities of -0.1, -0.5, -1.0, -1.5, and -2.0 mA/cm2

were applied. The sample was inserted into the electrolyte from the beginning of the process before this electrolyte was heated up from room temperature (RT) to 80°C. The growth was done for 1 h, counted when the electrolyte temperature reached 80°C or the set temperature Edoxaban (ST). Such temperature was chosen since C59 wnt the effective reaction of zinc nitrate and HMTA takes place at temperature above 80°C. After 1 h, the sample was removed immediately from the electrolyte and quickly rinsed with deionized (DI) water to remove any residue from the surface. The time chart of the growth is shown in Figure 1c. It was confirmed (data is not shown) that the growth without HMTA and heat tend to

generate nanoflake-like structure without any one-dimensional (1D) structure. It was shown that HMTA is able to promote the growth of one-dimensional ZnO structure in c-axis [26] by cutting off the access of Zn2+ ions at the sides of the structure, leaving only the polar (001) face to be exposed to Zn2+ ions for further nucleation. As been reported by Kim et al., ZnO nanostructure will not grow on graphene sheets at a growth temperature of 50°C because the activation energy for the nucleation of ZnO nanostructures cannot be achieved at this low temperature [23]. Therefore, higher temperature needs to be applied to achieve the nucleation of ZnO and to increase the hydrolyzation process of HMTA. Figure 1 Schematics and time chart. (a) Schematic of substrate with single-layer graphene, (b) schematic of electrochemical setup, and (c) time chart for electrochemical process.