CrossRef 36. Huang B, Liu Y, Wang J, Zhang R, Zhang L, Zhang L, Mei L: Magnetic properties PF-3084014 supplier and giant magnetoresistance in Fe0.35(In2O3)0.65 granular film. J Phys
Condens Matter 2003, 15:47–53.CrossRef 37. Xin Y, Lu J, Stampe PA, Kenney RJ: Crystallographically orientated fcc Co nanocrystals in rutile TiO2 thin films. Appl Phys Lett 2006, 88:112512.CrossRef 38. Lee S, Shon Y, Kim DY, Kang TW, Yoon CS: Enhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer. Appl Phys Lett 2010, 96:042115.CrossRef 39. Aksu S, Bacaksiz E, Parlak M, Yılmaz S, Polat I, Altunbaş M, Türksoy M, Topkaya R, Özdoğan K: Structural, optical and magnetic properties of Mn diffusion-doped CdS thin films prepared by vacuum evaporation. Mater Chem Phys 2011, 130:340–345.CrossRef 40. Zelaya-Angel O, Lozada-Morales R: Sphalerite-wurtzite phase transformation in CdS. Phys Rev B 2000, 62:13064–13069.CrossRef 41. Madhu C, Sundaresan A, Rao CNR: Room-temperature ferromagnetism in Vorinostat datasheet undoped GaN and CdS semiconductor nanoparticles. Phys Rev B 2008, 77:201306.CrossRef Competing interests
The authors declare that they have no competing interests. Authors’ contributions ZY prepared all the samples, participated in all of the measurements and data analysis, and drafted the manuscript. DG and DX conceived and designed the manuscript. ZZ1 carried out the XPS measurements and data analysis. JZ participated in the SQUID and TG-DTA measurements. ZZ2 carried out the XRD measurements and data analysis. ZS participated in the data analysis and interpretation of the results. All authors have been
involved in revising the click here manuscript and read and approved the final manuscript.”
“Background Until now, lots of research have been devoted towards the development of Si-based light sources that could enable the integration of photonics with Si microelectronics [1–3]. Si-based light sources could reduce the fabrication cost because their compatibility with a conventional complementary metal-oxide semiconductor (CMOS) technology is better than any other light source such as conventional Buspirone HCl GaAs- and GaN-based light emitters. Despite a lot of efforts for the realization of Si-based light sources with high efficiency, luminescence efficiency from Si-based light sources is still very low due to an indirect bandgap nature of the bulk Si [4, 5]. Recently, because of this obstacle for realizing efficient Si-based light sources, Si nanocrystals (NCs) have, therefore, attracted the most attention as promising light sources for the next generation of Si-based nanophotonics [6–8]. Si NCs showed a quantum confinement effect that increased in the overlapping of electron–hole wave functions, leading to an enhancement in luminescence efficiency [9]. Another advantage for light sources using Si NCs is that the optical bandgap can be easily tuned by changing the size of NCs. This implies that Si NCs are of particular interest as a light source, covering the whole visible wavelength range.